Maximization of Material Removal Rate in Oxide-CMP using Particle Swarm Optimization

نویسندگان

  • S. Kumar
  • T. K. Garg
  • V. P. Wani
چکیده

Oxide CMP process is used in wafer fabrication to polish dielectric films. At the advance technology nodes, due to the complexity in the circuit design, CMP requirement has increased tremendously. Pattern density variations inside the die area increase especially in the big die size codes. It creates challenges for within die uniformity. Developing a cost effective process required high polish rate. But it is very challenging to develop a high polish rate process with low surface non uniformity. In this work, a methodology is explained to maximize the polish rate by using mathematical optimization technique. Material removal rate optimization is being done within the required non uniformity.

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تاریخ انتشار 2012